Laboratories IKBFU

Research and Education Centre “Functional Nanomaterials”

General information
Address:
6, Gaidara str. Kaliningrad, Russia
Scientific and Technological park “Fabrika”

REC Functional Nanomaterials (FN) brings together a unique set of scientific and laboratory equipment for the nanomaterials synthesis and studying their critical properties (physical and chemical parameters, structural, magnetic, optical, etc. properties). This enables the REC FN to develop a wide variety of nanotechnology-based products: from novel materials for nanoelectronics and spintronics which is a material science problem to R&D work on hardening coatings for construction, metal, pharmaceutical, and other industries.

The research team works in an interdisciplinary science and technology field studying the properties of materials and development the devices with basic building blocks of only a few tens of nanometres in size.

Research Area:

  • research and development of biosimilar nanoscale memristor-based memory elements;

  • design and production of multilayer reflectors for visible light, x-ray, and neutron optics.

  • design and fabrication of functional materials and surface structures for biomolecular research;

  • nano-modification of materials and structures addressing the challenges in applied material science (including aerospace, nuclear, and energy industries)

  • fabrication of silver-based nanocoatings for wound dressing;

  • development of technological framework for nano-modified structures formation;

  • a range of studies on structural properties, phase and chemical composition of objects with a nanometre resolution.

The research results have allowed the Centre to develop a solid scientific and technical base giving it a leading position in modern oxide electronics. The Centre occupies the growth niche for novel inorganic memristors, neural networks and functional oxides. The materials created by the team are in demand by modern nanoelectronics industry. The Centre aims to enter the global biosimilar electronics market.

Functional Nanomaterials REC staff members cooperate with international synchrotron radiation facilities (ESRF, DESY) and with the Kurchatov Institute.

The REC actively develops and manufactures scientific equipment tailored to address the above stated challenges. A part of this process is the launch of a modified Van der Graaf accelerator scheduled for 2017. This unique scientific object can be used not only to study nanomaterials and structures, but also to carry out their controlled modifications by light and heavy ions implantation.

At the moment REC FN is working on set of the projects for new materials for nanoelectronics development. Some of them:

1) TITLE: Nanostructured, Bulk And Thin-Film Transition Metal Compounds as an Advanced Area of Nanoelectronics

Head of the Laboratory for Strongly Correlated Electron Systems (part of REC FN): Dr. Evgeniy Klementyev EKlementev@kantiana.ru.

RESEARCH OBJECT: transition metal compounds including silicides and oxides of 3d-metals (Fe, Mn, Cr, Ni), Fe3Si films, and silicide-based composites. The extraordinary properties of silicides attract considerable physicists' interest. It was in this compound that scientists have experimentally discovered skyrmions, whirlpool-like patterns in a magnetic field, an exotic topological objects widely discussed by physics community. Iron and nickel silicides may be the main components of the Earth's core. As for other astronomical objects, it should be noted that asteroids striking the Earth often consist of chemically pure silicides.

PURPOSE. The project suggests both synthesis and studying of bulk, thin film, and nanostructured materials. Synthesis techniques shall include laser deposition, magnetron sputtering, and ion plasma deposition. The study shall examine not only macroscopic and static properties but also dynamic properties, i.e. elementary excitations spectra. The study of the physical and structural properties of these materials shall be carried out using scientific and technical base of the IKBFU's laboratories and in leading international synchrotron radiation facilities and neutron facilities.

By now, the first prototypes have been already synthesised and a technique for calculation of dynamic and static properties has been developed.

POSSIBLE APPLICATIONS. Thin-film transition-metal oxides and silicides play an important role in modern nanoelectronics. Fabrication of perpendicularly magnetized thin-film nanostructures of iron silicides and oxides is important for fabrication of functional layers for ultra-sensitive magnetic field sensors, current sensors, etc. Some silicides and silicide-based composites can be used as thermoelectric energy converters in cooling modules an DC generators with high thermoelectric power factor.

PARTNERS. The project shall be carried out in collaboration with the National Scientific Research Center "Kurchatov Institute", Moscow, the B.P. Konstantinov Petersburg Institute of Nuclear Physics, Gatchina, the L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, the DESY, Hamburg, Germany.

2) TITLE: Development of the functional bio-similar memory element based on doped silicon crystal nanowire.

The Aim.

The aim of this project is to develop a technology for creating nanoszied memristor clusters based on self-assembled Si:Me(Au,Ag) nanowhiskers.

The main result of the project should become a neuromorphic prototype with CMOS neurons and memristor clusters based on self-assembled Si:Me(Au,Ag) nanowhiskers synapses in a crossbar configuration

Relevance and scientific novelty.

Throughout the world, recent years have seen an increase in the development of memristors – passive electrical components with a dynamic resistance that changes depending on the charge flowing through them [1], able to mimic a synapse [2], and adequate to the task of parallel processing, including learning and decision-making.

The possibility of creating 3D memristor structures based on Ag/Au-doped nanowhiskers (2-5 nm) vertically grown on a conducting Si substrate and isolated with a conformal Al2O3 layer (see figures in the Appendix 1 for part 4) is very interesting from the perspective of its potential use in electronics and rather promising due to its compatibility with the silicon technology.

Today, all known approaches to creating memristor prototypes rely on the standard planar technology of developing feedstock and further prototyping using lithography (2D approaches). A distinctive feature of the proposed approach is the formation of vertical memristor structures in Ag-doped Si:Au nanowhiskers, i.e. the creation of memristors in each nanowhisker (a 3D approach). The ultimate objective of this project is the development and testing of a methodology for ordering the developed nanowhisker memristor structure on the substrate according to a template for a simpler integration of the approach into the series technologies of electronic component production.

Groundwork.

The project team has prepared groundwork on the formation of self-assembled Si:Au nanoclusters and nanowhiskers [3,4], the developmentt of and research on resistive bipolar switching in Si-Ag structures [5], and the creation of conformal thin film Al2O3 coating using the atomic layer-by-layer deposition method [6]. This groundwork serves as the basis for project application and ensures its successful implementation.

The primary employer of the project team members has the necessary equipment for structure development (pulsed laser deposition, atomic layer-by-layer deposition, magnetron and ion-plasma sputtering systems, etc.), research (diffractometry, Raman spectrometry, spectrophotometry, and Auge electronic, transmission electron, and atomic force microscopy), and prototyping (a two-beam electron-ion system). This makes a comprehensive study possible without involving outside organisations.

The objectives to be achieved by the project include:

  1. Experiments to study the conditions and parameters of creating memristor structures based on Si:Me(Au,Ag)

  2. Development of a technology for growing Si:Me(Au,Ag) nanowhiskers and the formation of a protective aluminium oxide-based coating.

  3. Development and prototyping of the memristor structures of Si:Me(Au,Ag) nanowhiskers with an Al2O3 protective coating and contact pads.

  4. Development and testing of a methodology for ordering memristor nanowhisker structures on Si substrates according to a template.

A success criterion for memristor cluster creation is an examination of the current-voltage characteristics and demonstration of resistive bipolar current-voltage switching in wide rang of frequencies


Equipment

Functional Nanomaterials Fabrication

Ion-Plasma Sputtering System

Large-scale Vacuum Magnetron Sputtering System

Atomic Layer Deposition (ALD) System

Pulse Laser Deposition (PLD) System

Functional Nanomaterials Research

JEOL JSM-6390LV Scanning Electron Microscope integrated with Oxford INCA Energy EDS system

SmartSPM Fully Automated Scanning Probe Microscope

Bruker D8 DISCOVER X-ray Diffractometer

Jeol JEM 100c Transmission Electron Microscope

HORIBA LabRam HR 800 Stimulated Raman Scattering Spectrometer (Raman spectrometer)

Research System based on JEOL JAMP - 9500F Auger Microprobe and EDX Detector

Shimadzu UV 3600 Spectrophotometer

Research Team

The project team was formed so that the development of each methodology and concept would be supervised by an assigned person – a young PhD, research fellow, or PhD student. Attrcted researchers are young qualified professionals – Dr Maxim Demin is a specialist in the formation of and research on thin film structures using the pulsed laser reactive deposition method, Dr Petr Shvets is a spectroscopist, an experienced researcher on the structural and morphological properties of nanosized materials using the methods of Raman spectrometry, optical spectrophotometry, etc., he also has extensive experience in experimental and theoretical work with linear nanoscale structures - carbon nanotubes.

Dr Goikhman AlexanderDirector: Dr Goikhman Alexander
Contacts:
Tel: +7 (4012) 595-595 (ext. 9022)
E-mail: AGoikhman@innopark.kantiana.ru
 
Thin Film Growth Group:
Head of the Group: Maksimova Ksenia, researcher
Contacts:
Tel.: +7 (4012) 595-595 (ext. 9039)
E-mail: kmaksimova@innopark.kantiana.ru
 
Invited young researcher: Dr Shvets Petr, senior researcher
Contacts:
Tel. +7 (4012) 595-595 (ext. 9043)
E-mail: pshvets@innopark.kantiana.ru
 
Grunin Alexey, junior researcher
Contacts:
Tel.: +7 (4012) 595-595 (ext. 9036)
E-mail: agrunin@innopark.kantiana.ru
 
PhD students :
Yurkevich Oksana
Contacts:
Tel.: +7 (4012) 595-595 (ext. 9031)
E-mail: oyurkevich@innopark.kantiana.ru
Dikaya Olga
Contacts:
Tel.: +7 (4012) 595-595 (ext. 9047)
E-mail: odikaya@innopark.kantiana.ru
Koneva Uliyana
Contacts:
Tel.: +7 (4012) 595-595 (ext. 9046)
E-mail: ukoneva@innopark.kantiana.ru
 
Students:
Kozlov Anatoliy
Barkovskaya Nadezhda
 
Laboratory of Highly correlated electronic systems
Head of the Laboratory: Dr Evgeniy Klementiev
Contacts:
Tel. +7 (4012) 595-595 (ext. 9044)
E-mail: eklementev@ kantiana.ru
 
PhD student: Dmitry Serebrennikov
Contacts :
E-mail: dserebrennikov@innopark.kantiana.ru
 
Sector of Ion-beam technologies (Van de Graaf accelerator)
Head of the Sector: Efimov Dmitry
Contacts:
Tel. +7 (4012) 595-595 (ext. 9048)
E-mail: DDEfimov@kantiana.ru
 
Engineers: Molchanov Vitaliy, Severin Evgeniy, Fedotov Vladimir
 
Administrative Unit:
Smirnova Inna
Contacts:
Tel. +7 (4012) 595-595 (ext. 9021)
E-mail: ismirnova@innopark.kantiana.ru
Toropova Olga
Contacts :
Tel. +7 (4012) 595-595 (ext. 7105)
E-mail: otoropova@innopark.kantiana.ru
 
Technical Support:
Head: Prokopovich Pavel
Contacts:
Tel. +7 (4012) 595-595 (ext. 9032)
E-mail: PProkopovich@innopark.kantiana.ru
Engineer : Dolgoborodov Artur
Technician : Kolesinskiy Vadim

Publications

1. Sascha Vongehr, "The Missing Memristor:Novel Nanotechnology or rather new Case Study for the Philosophy and Sociology of Science", Advanced Science Letters 17, pp. 285-290 (2012);

2. Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart & R. Stanley Williams, The missing memristor found, Nature 453, 80-83 (2008);

3.K.Yu. Maksimova, Yu.A. Matveev, A.V. Zenkevich, V.N. Nevolin, A.G. Novikov, P.I. Gaiduk, A.S. Orekhov,Perspektivnye materialy, №2, 33-38, 2012

4. A. Novikau, P. Gaiduk, K. Maksimova, A. Zenkevich “Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture”, Nanoscale Research Letters, 6, 148, 2011

5. Shevyrtalov S.N., Koiva D.A., Goikhman A.Yu., Resistive bipolar switching in thin memristive structure based on Si-Ag, Vestnik BFU, 04 (2014), 24-28

6. O. V. Yurkevich, K. Yu. Maksimova, A. Yu. Goikhman, A. A. Snigirev, and I. I. Snigireva, Thin Film Protective Coatings of Beryllium Windows and Lenses for Intense X-Ray Radiation Sources, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, Vol. 9, No. 2, pp. 243–247 (2015)